J. Dickmann, S. Schildberg, A. Geyer, B. Maile, A. Schurr, S. Heuthe, P. Narozny
{"title":"Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs","authors":"J. Dickmann, S. Schildberg, A. Geyer, B. Maile, A. Schurr, S. Heuthe, P. Narozny","doi":"10.1109/ICIPRM.1994.328238","DOIUrl":null,"url":null,"abstract":"A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53<x<0.7) HEMTs is presented. From temperature- and composition dependent measurements and burn-out experiments it is demonstrated that on-state breakdown in these devices is dominated by impact ionization and that the location of on state breakdown is the channel layer. The on-state breakdown voltage drops with increasing indium mole fraction in the channel layer.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53>