Design and optimization of low-voltage low-power quasi-floating gate digital circuits

K. Townsend, J. Haslett, K. Iniewski
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引用次数: 11

Abstract

This paper explores the design and optimization of quasi-floating gate MOS techniques to low-voltage/low-power digital circuitry. The simulated power consumption of standard CMOS gates is compared to that of QFGMOS implementations in a 0.18/spl mu/m process for different supply voltages and device sizes. A 0.4V V/sub DD/ full-adder biased for propagation delay similar to that of 0.8V CMOS is simulated and shown to consume 1.2/spl mu/W for a 50MHz input, representing more than a 50% power reduction over the CMOS equivalent. A divide-by-16 circuit designed for operation at a maximum frequency of 400MHz uses 25/spl mu/W, 45/spl mu/W, and 75/spl mu/W for supplies of 0.4V, 0.6V and 0.8V.
低压低功耗准浮门数字电路的设计与优化
本文探讨了准浮栅MOS技术在低电压低功耗数字电路中的设计与优化。在不同的电源电压和器件尺寸下,将标准CMOS栅极的模拟功耗与QFGMOS实现在0.18/spl mu/m工艺下的功耗进行了比较。模拟了与0.8V CMOS相似的0.4V /sub DD/全加法器的传播延迟偏置,并显示在50MHz输入时消耗1.2/spl mu/W,比CMOS等效功率降低50%以上。在最大频率为400MHz的情况下,采用25/spl mu/W、45/spl mu/W和75/spl mu/W供电,分别为0.4V、0.6V和0.8V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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