{"title":"Design and optimization of low-voltage low-power quasi-floating gate digital circuits","authors":"K. Townsend, J. Haslett, K. Iniewski","doi":"10.1109/IWSOC.2005.49","DOIUrl":null,"url":null,"abstract":"This paper explores the design and optimization of quasi-floating gate MOS techniques to low-voltage/low-power digital circuitry. The simulated power consumption of standard CMOS gates is compared to that of QFGMOS implementations in a 0.18/spl mu/m process for different supply voltages and device sizes. A 0.4V V/sub DD/ full-adder biased for propagation delay similar to that of 0.8V CMOS is simulated and shown to consume 1.2/spl mu/W for a 50MHz input, representing more than a 50% power reduction over the CMOS equivalent. A divide-by-16 circuit designed for operation at a maximum frequency of 400MHz uses 25/spl mu/W, 45/spl mu/W, and 75/spl mu/W for supplies of 0.4V, 0.6V and 0.8V.","PeriodicalId":328550,"journal":{"name":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSOC.2005.49","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
This paper explores the design and optimization of quasi-floating gate MOS techniques to low-voltage/low-power digital circuitry. The simulated power consumption of standard CMOS gates is compared to that of QFGMOS implementations in a 0.18/spl mu/m process for different supply voltages and device sizes. A 0.4V V/sub DD/ full-adder biased for propagation delay similar to that of 0.8V CMOS is simulated and shown to consume 1.2/spl mu/W for a 50MHz input, representing more than a 50% power reduction over the CMOS equivalent. A divide-by-16 circuit designed for operation at a maximum frequency of 400MHz uses 25/spl mu/W, 45/spl mu/W, and 75/spl mu/W for supplies of 0.4V, 0.6V and 0.8V.