Complex behavior in memristor circuits based on static nonlinear two-ports and dynamic bipole

Jacopo Secco, M. Biey, F. Corinto, A. Ascoli, R. Tetzlaff
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引用次数: 4

Abstract

Since memristors are widely studied and the range of applications developed for these devices are becoming increasingly broad, circuital implementations exhibiting fingerprints of memristive behavior have become highly relevant. A class of memristor circuits was recently obtained by cascading a static nonlinear two-port with a dynamical one-port. In general, these circuits are classifiable as extended memristors and may be controlled either in current or in voltage. This paper has the aim of presenting a novel element from this class which experiences various complex behaviors, including periodic oscillations and chaos. This thorough investigation of the rich nonlinear dynamics emerging in the proposed circuit may shed light on interesting engineering applications that memristors may be suited for.
基于静态非线性双端口和动态双极的忆阻电路的复杂行为
由于忆阻器被广泛研究,并且为这些器件开发的应用范围越来越广泛,因此显示忆阻行为指纹的电路实现变得高度相关。用静态非线性双端口与动态单端口级联的方法得到了一类忆阻电路。一般来说,这些电路可归类为扩展忆阻器,可以用电流或电压控制。本文旨在从该类中提出一种具有各种复杂行为的新元件,包括周期振荡和混沌。对所提出电路中出现的丰富非线性动力学的深入研究可能会揭示记忆电阻器可能适合的有趣工程应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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