Small signal model of Cylindrical Surrounding Double-Gate MOSFET and its parameters

Abstract

The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.