C. Shang, Kaiyin Feng, E. Hughes, Andrew Clark, Mukul Debnath, R. Koscica, G. Leake, J. Herman, D. Harame, P. Ludewig, J. Bowers
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引用次数: 0
Abstract
We report the first electrically pumped InAs quantum dot lasers grown in narrow oxide pockets patterned on 300 mm Si wafer for monolithic on-chip light source. This architecture should enable the next generation of photonics integrated circuit platforms.