Low Noise Amplifiers Using Two Dimensional Electron Gas FETs

T. Mochizuki, K. Honma, K. Handa, W. Akinaga, K. Ohata
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引用次数: 4

Abstract

Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.
使用二维电子气体场效应管的低噪声放大器
公开了最近开发的用于卫星通信地面站的含二维电子气场效应管的lna,该lna具有划时代的低噪声。在2、4、12和20 GHz频段,在室温下,特别是在冷却状态下。通常进一步详细介绍新开发的最大55k的4ghz频段LNA。在室温下的噪声温度,在热电(TE-)冷却状态(约45℃)下,800 MHz带宽(3.4 ~ 4.2 GHz)上的噪声温度为30 K数量级,KDD进行的新地面站采用了该噪声温度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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