Degradation of veteran Si modules in hot-humid locations in México

D. Martinez-Escobar, P. Sánchez-Pérez, R. Santos-Magdaleno, J. Ortega-Cruz, A. Sanchez-Juarez
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引用次数: 0

Abstract

In this work, the results of the research carried out on degradation mechanisms of c-SI PV modules after > 10 years of exposure in a Hot and humid climate in Mexico are presented. Degradation analysis using visual inspection, electrical performance, EL image, and IR was performed. 1-measurement analysis was implemented to determine the degradation rate per year. The Pmax degradation rate obtained was 1:41%/yr. The results presented indicate that most of the electrical degradation is due FF drop (increased series resistance) among other details. The aim of this work is to provide information regarding the long term reliability and degradation rate of c-Si modules in the hot and humid climate in Mexico.
老硅模块在墨西哥高温潮湿地区的退化
在这项工作中,介绍了在墨西哥炎热潮湿的气候中暴露> 10年后c-SI光伏组件降解机制的研究结果。使用目视检查、电性能、EL图像和IR进行退化分析。采用1-测量分析确定每年的降解率。得到的Pmax降解率为1:41%/yr。结果表明,除其他细节外,大部分电退化是由于FF下降(串联电阻增加)造成的。这项工作的目的是提供关于c-Si模块在墨西哥炎热潮湿气候下的长期可靠性和降解率的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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