High Bandwidth Memory (HBM) and High Bandwidth NAND (HBN) with the Bumpless TSV Technology

K. Sakui, T. Ohba
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引用次数: 1

Abstract

This paper proposes a fundamental architecture for the High Bandwidth Memory (HBM) with the bumpless TSV for the Wafer-on-Wafer (WOW) technology. The bumpless interconnects technology can increase the number of TSVs per chip with fine pitch of TSVs, and reduce the impedance of the TSV interconnects with no bumps. Therefore, a further higher speed and higher density HBM can be realized. Also, the High Bandwidth NAND (HBN), which can read and program by plane instead of by line by using the bumpless TSV, has been proposed.
采用无凸点TSV技术的高带宽存储器(HBM)和高带宽NAND (HBN
本文提出了一种基于片对片(WOW)技术的无凹凸TSV高带宽存储器(HBM)的基本架构。采用无凸点互连技术,可以在减小凸点间距的同时,增加单片TSV的数量,降低无凸点TSV互连的阻抗。因此,可以进一步实现更高速度和更高密度的HBM。此外,本文还提出了一种高带宽NAND (HBN),该NAND采用无碰撞的TSV,可以在平面上而不是在线路上进行读取和编程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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