Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling

Abstract

Quasi-monocrystalline germanium (QMC Ge) is investigated for potential applications in high-efficiency, low-cost multi-junction solar cell design. The morphology and electrical resistivity of QMC Ge is characterized and computer simulations of MJSCs on Si substrates using QMC Ge interface layer are developed.