Structuring of silicon surface after vacuum-plasma treatment through discontinuous carbon film

Abstract

The results of structuring silicon surface after vacuum-plasma treatment through discontinuous carbon film are shown. The geometric and concentration features of silicon juts are established. The range of radius of rounding is 0.5–5 mkm depending on type of surface and treatment. The range of concentration 6∗108–1.6∗109 cm2 depending on type of surface and treatment. As shown the freon plasma treatment give more preferable parameter of silicon juts. The temperature depending exert influence on silicon juts too. For instance the features of silicon juts created after freon plasma treatment and high temperature have minimum radius of rounding and maximum concentration.