Sub- THz Switch-less Reconfigurable Triple-/Push-push Dual-band VCO for 6G Communication

Seongwoog Oh, Jinhyun Kim, Jungsuek Oh
{"title":"Sub- THz Switch-less Reconfigurable Triple-/Push-push Dual-band VCO for 6G Communication","authors":"Seongwoog Oh, Jinhyun Kim, Jungsuek Oh","doi":"10.1109/RFIC54546.2022.9863159","DOIUrl":null,"url":null,"abstract":"This work presents a novel switch-less reconfigurable triple-/push-push dual-band VCO topology and design methods for a W-band metal-oxide-semiconductor (CMOS) voltage-controlled oscillator (VCO). A clover-shaped inductor with a three-port connection and single frequency multiplied output port configuration provides switch-less mode changes between triple-push and push-push operation. This topology is demonstrated in a W-band VCO by controlling three cores with a measured phase noise of −109.17 dBc/Hz at a 10-MHz offset of a 105.3 GHz carrier. The measured center frequency of each band is 91.04 GHz and 102.33 GHz with a tuning range of 10.4% and 14.1 %, respectively. The proposed VCO with independent core on/off state control enables low parasitic switch-less frequency band shift resulting in a superior tuning range compared to those of conventional dual-/single-band VCOs. The effectiveness of this approach is demonstrated through fabrication in a 28-nm CMOS process, with the best FOMT being −174.4 dBc/Hz in this case.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"202 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC54546.2022.9863159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This work presents a novel switch-less reconfigurable triple-/push-push dual-band VCO topology and design methods for a W-band metal-oxide-semiconductor (CMOS) voltage-controlled oscillator (VCO). A clover-shaped inductor with a three-port connection and single frequency multiplied output port configuration provides switch-less mode changes between triple-push and push-push operation. This topology is demonstrated in a W-band VCO by controlling three cores with a measured phase noise of −109.17 dBc/Hz at a 10-MHz offset of a 105.3 GHz carrier. The measured center frequency of each band is 91.04 GHz and 102.33 GHz with a tuning range of 10.4% and 14.1 %, respectively. The proposed VCO with independent core on/off state control enables low parasitic switch-less frequency band shift resulting in a superior tuning range compared to those of conventional dual-/single-band VCOs. The effectiveness of this approach is demonstrated through fabrication in a 28-nm CMOS process, with the best FOMT being −174.4 dBc/Hz in this case.
用于6G通信的亚太赫兹无开关可重构三/推-推双频压控振荡器
本文提出了一种新的无开关可重构的三/推-推双带VCO拓扑结构,以及用于w波段金属氧化物半导体(CMOS)压控振荡器(VCO)的设计方法。三叶草型电感具有三端口连接和单频倍增输出端口配置,在三推和推推操作之间提供无开关模式变化。在105.3 GHz载波的10mhz偏置下,该拓扑通过控制三个内核来演示w波段VCO,测量相位噪声为- 109.17 dBc/Hz。测得各频段中心频率分别为91.04 GHz和102.33 GHz,调谐范围分别为10.4%和14.1%。与传统的双/单频段VCO相比,该VCO具有独立的核心开/关状态控制,可实现低寄生无开关频带移位,从而具有优越的调谐范围。该方法的有效性通过在28纳米CMOS工艺中制造来证明,在这种情况下,最佳fmt为- 174.4 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信