{"title":"A Shape Memory Alloy 1×2 Optical Waveguide Switch","authors":"R. Fechner, C. Chlub, E. Quandt, M. Kohl","doi":"10.1109/NANO.2018.8626320","DOIUrl":null,"url":null,"abstract":"This paper presents design, fabrication and characterization of a novel integrated optical waveguide switch that allows for coupling of an input port in either of two output ports. A new fabrication process has been developed to integrate a shape memory alloy (SMA) bimorph nanoactuator with a footprint below 5 $\\mu \\mathrm{m}^{2}$ on a silicon photonic chip. Optical measurements demonstrate a decrease in power transfer by 53 % for a decrease in gap size from 250 nm to 200 nm at a wavelength of 1300 nm, which is in line with FEM-based simulations. The simulations further indicate that a decrease in power transfer by 100% occurs at a gap size of 170 nm.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2018.8626320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents design, fabrication and characterization of a novel integrated optical waveguide switch that allows for coupling of an input port in either of two output ports. A new fabrication process has been developed to integrate a shape memory alloy (SMA) bimorph nanoactuator with a footprint below 5 $\mu \mathrm{m}^{2}$ on a silicon photonic chip. Optical measurements demonstrate a decrease in power transfer by 53 % for a decrease in gap size from 250 nm to 200 nm at a wavelength of 1300 nm, which is in line with FEM-based simulations. The simulations further indicate that a decrease in power transfer by 100% occurs at a gap size of 170 nm.