Quantitative analysis of in-field defects in image sensor arrays

Jenny Leung, J. Dudas, G. Chapman, I. Koren, Z. Koren
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引用次数: 40

Abstract

Growth of pixel density and sensor array size increases the likelihood of developing in-field pixel defects. An ongoing study on defect development in imagers has now provided us sufficient data to be able to quantify characteristics of defect growth. Preliminary investigations have shown that defects are distributed randomly and the closest distance between two defective pixels is approximately 79-340 pixels apart. Furthermore, from an observation of 98 cluster-free defects, the diameter of the defect is estimated to be less than 2.3% of a pixel size at 99% confidence level. The fact that no defect clusters were found in the study of various digital cameras allows us to conclude that defects are not likely to be related to material degradation or imperfect fabrication but are due to environmental stress such as radiation. Furthermore, as verified by a statistical study, the absence of defect clustering provides information on the size of defects and insight into the nature of the defect development.
图像传感器阵列场内缺陷的定量分析
像素密度和传感器阵列尺寸的增长增加了产生场内像素缺陷的可能性。一项正在进行的成像仪缺陷发展的研究现在已经为我们提供了足够的数据来量化缺陷生长的特征。初步研究表明,缺陷是随机分布的,两个缺陷像素之间的最近距离约为79-340像素。此外,通过对98个无簇缺陷的观察,在99%的置信水平下,缺陷的直径估计小于像素尺寸的2.3%。在各种数码相机的研究中没有发现缺陷簇,这一事实使我们可以得出这样的结论:缺陷不太可能与材料退化或制造不完美有关,而是由于辐射等环境压力所致。此外,通过统计研究证实,缺陷聚类的缺失提供了关于缺陷大小的信息,并深入了解缺陷开发的本质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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