Noise Analysis of 1.0 THz GaN IMPATT Source

Abstract

Noise analysis of 1.0 THz Wz-GaN IMPATT source has been carried out by the authors. A two-dimensional avalanche noise model for IMPATT diodes developed by the authors has been used in the present paper to study the avalanche noise characteristics of the said source. Results reveal that the mean-square noise voltage per unit bandwidth (i.e. noise spectral density) of the source lies in the order of 10–16 $\mathrm{V}^{2}\ \mathrm{s}$ and noise measure remains within the range of 7.3440 – 5.8755 dB due to the variation of bias current within the range of 78.54 – 98.17 mA for a fictitious value of zero series resistance. However, around 3 – 7% increase in noise measure has been obtained by considering earlier calculated series resistance values ranging from $1.5779 - 1.7879 \Omega$.