Multi Layer Metallization

M. Lerme
{"title":"Multi Layer Metallization","authors":"M. Lerme","doi":"10.1109/ESSDERC.1997.194378","DOIUrl":null,"url":null,"abstract":"Scaling down of interconnect will increase circuit density at the detriment of performance if no improvement in both design and technology are introduced. Consequently, new materials improving this interconnect performance will be introduced such as conductor with lower resistivity compared to aluminum alloys and dielectric with lower ε compared to silicon oxide as well as new architecture for integration.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194378","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Scaling down of interconnect will increase circuit density at the detriment of performance if no improvement in both design and technology are introduced. Consequently, new materials improving this interconnect performance will be introduced such as conductor with lower resistivity compared to aluminum alloys and dielectric with lower ε compared to silicon oxide as well as new architecture for integration.
多层金属化
如果没有设计和技术上的改进,缩小互连将增加电路密度,损害性能。因此,改善互连性能的新材料将被引入,例如与铝合金相比具有更低电阻率的导体和与氧化硅相比具有更低ε的电介质,以及用于集成的新架构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信