Logic design considerations for 0.5-volt CMOS

K. Hass, J. Venbrux, P. Bhatia
{"title":"Logic design considerations for 0.5-volt CMOS","authors":"K. Hass, J. Venbrux, P. Bhatia","doi":"10.1109/ARVLSI.2001.915552","DOIUrl":null,"url":null,"abstract":"As the operation supply voltage for commercial CMOS devices falls below 2 V, research activities are underway to develop CMOS integrated circuits that can operate at supply voltages well under 1 V. Although dramatic power reductions can be achieved using low supply voltages in high performance applications, the increased subthreshold leakage that results when transistor threshold voltages are lowered can render some conventional logic circuit systems unusable. Furthermore, some low voltage circuits are not robust when faced with normal variations in threshold voltage. This paper examines the design consideration for logic and memory circuits in very low voltage CMOS and compares simulated behavior with measurements of fabrication test circuits. These circuit examples were closed because they illustrate the unique design challenges of low voltage CMOS.","PeriodicalId":424368,"journal":{"name":"Proceedings 2001 Conference on Advanced Research in VLSI. ARVLSI 2001","volume":"252 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2001 Conference on Advanced Research in VLSI. ARVLSI 2001","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARVLSI.2001.915552","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

As the operation supply voltage for commercial CMOS devices falls below 2 V, research activities are underway to develop CMOS integrated circuits that can operate at supply voltages well under 1 V. Although dramatic power reductions can be achieved using low supply voltages in high performance applications, the increased subthreshold leakage that results when transistor threshold voltages are lowered can render some conventional logic circuit systems unusable. Furthermore, some low voltage circuits are not robust when faced with normal variations in threshold voltage. This paper examines the design consideration for logic and memory circuits in very low voltage CMOS and compares simulated behavior with measurements of fabrication test circuits. These circuit examples were closed because they illustrate the unique design challenges of low voltage CMOS.
0.5伏CMOS的逻辑设计注意事项
由于商用CMOS器件的工作电源电压低于2v,研究活动正在进行中,以开发CMOS集成电路,可以在远低于1v的电源电压下工作。尽管在高性能应用中使用低电源电压可以实现显著的功耗降低,但当晶体管阈值电压降低时,导致的亚阈值泄漏增加可能会使一些传统的逻辑电路系统无法使用。此外,当阈值电压正常变化时,一些低压电路的鲁棒性较差。本文研究了极低电压CMOS中逻辑电路和存储电路的设计考虑,并将模拟行为与制造测试电路的测量结果进行了比较。这些电路示例是封闭的,因为它们说明了低压CMOS的独特设计挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信