Design of an MTJ-Based Nonvolatile LUT Circuit with a Data-Update Minimized Shift Operation for an Ultra-Low-Power FPGA: (Abstract Only)

D. Suzuki, T. Hanyu
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Abstract

Nonvolatile FPGAs (NV-FPGAs) have a potential advantage to eliminate wasted standby power which is increasingly serious in recent standard SRAM-based FPGAs. However, functionality of the conventional NV-FPGAs are not sufficient compared to that of standard SRAM-based FPGAs. For example, an effective circuit structure to perform shift-register (SR) function has not been proposed yet. In this paper, a magnetic tunnel junction (MTJ) based nonvolatile lookup table (NV-LUT) circuit that can perform SR function with low power consumption is proposed. The MTJ device is the best candidate in terms of virtually unlimited endurance, CMOS compatibility, and 3D stacking capability. On the other hand, large power consumption to perform SR function a serious design issue for the MTJ-based NV-LUT circuit. Since the write current for the MTJ device is large and all the data must be updated after the SR operation using CMOS-oriented method, large power consumption is indispensable. To overcome this issue, the address for read/write access is incremented at each cycle instead of direct data shifting in the proposed LUT circuit. In this way, the number of data update per 1-bit shift is minimized to one, which results in great power saving. Moreover, since the selector is shared both read (logic) and write operation, its hardware cost is small. In fact, 99% of power reduction and 52% of transistor counts reduction compared to those of SRAM-based LUT circuit are performed. The authors would like to acknowledge ImPACT of CSTI, CIES consortium program, JST-OPERA, and JSPS KAKENHI Grant No. 17H06093.
基于mtj的超低功耗FPGA数据更新最小化移位非易失性LUT电路设计
非易失性fpga (nv - fpga)在消除待机功率浪费方面具有潜在的优势,而待机功率浪费在最近基于sram的标准fpga中日益严重。然而,与标准的基于sram的fpga相比,传统的nv - fpga的功能是不够的。例如,实现移位寄存器(SR)功能的有效电路结构尚未被提出。本文提出了一种基于磁隧道结(MTJ)的非易失性查找表(NV-LUT)电路,该电路可以在低功耗下实现SR功能。MTJ器件在几乎无限的耐用性,CMOS兼容性和3D堆叠能力方面是最佳候选。另一方面,执行SR功能的大功耗是基于mtj的NV-LUT电路的一个严重设计问题。由于MTJ器件的写电流很大,并且采用面向cmos的方法进行SR操作后必须更新所有数据,因此大功耗是必不可少的。为了克服这个问题,在建议的LUT电路中,读/写访问的地址在每个周期递增,而不是直接进行数据移动。这样,每1位移位的数据更新次数减少到1,从而大大节省了电力。此外,由于选择器的读(逻辑)和写操作都是共享的,所以它的硬件开销很小。实际上,与基于sram的LUT电路相比,功耗降低99%,晶体管数量减少52%。作者感谢CSTI、CIES联合项目、JST-OPERA和JSPS KAKENHI Grant No. 17H06093的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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