High mobility SnO2 TFT for display and future IC

Abstract

Very high mobility of 149~189 cm²/Vs, large on-to-off current ratio (I_ON/I_Off) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2~2.5 V were achieved in SnO₂ TFT device at an ultra-thin SnO₂ thickness of 4.5 nm. The device mobility of SnO₂ TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS₂ MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO₂/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO₂ transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.