Influence of probing configuration and data set size for bipolar junction capacitance determination

Abstract

In this paper, the on-wafer measurement of junction depletion capacitance is examined. This work provides an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure the junction capacitances accurately. The results from this method compare favourably with those extracted using S-parameter measurements. Additionally a method is formulated to determine the minimum number of data points required to maintain extraction accuracy.