A 72-nW 440-mV Time Register Using Stacked-NMOS-Switched Gated Delay Cell in Biomedical Applications

Guowei Chen, C. D. Bui, Xinyang Yu, Md. Zahidul Islam, A. Kobayashi, K. Niitsu
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引用次数: 1

Abstract

This paper presents a time register that uses a gated delay pipeline, to hold or propagate time information through the line by a stacked NMOS switch. The minimum supply voltage can be down to 440 mV, which is much lower than previous state-of-the-arts whose supply voltage is 1 V or higher, making this design beneficial for wearable/implantable devices in biomedical applications. The post-layout simulation performed in 65-nm CMOS technology confirms the function of the proposed time register at a conversion rate of 10 MSamples/s. The stacked-NMOS-switched architecture contributes to low leakage current, realizing low power consumption of 72 nW. In addition, the coefficient of determination, denoted R2, is 0.9956 in the linear input range of 4–11 ns, indicating good linearity.
基于堆叠nmos开关门控延迟单元的72-nW 440-mV时间寄存器在生物医学中的应用
本文提出了一种使用门控延迟管道的时间寄存器,通过堆叠NMOS开关在线路中保存或传播时间信息。最小供电电压可低至440 mV,远低于之前的1 V或更高的供电电压,使该设计有利于生物医学应用中的可穿戴/植入式设备。在65纳米CMOS技术上进行的布局后仿真证实了所提出的时间寄存器的功能,转换速率为10 MSamples/s。堆叠nmos开关架构有助于低泄漏电流,实现低功耗72 nW。在4-11 ns的线性输入范围内,测定系数R2为0.9956,线性良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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