Incremental Grounded Voltage Controlled Memristor Emulator

A. Hassanein, Abdulaziz H. Elsafty, L. Said, A. Madian, A. Radwan
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引用次数: 12

Abstract

Memristor has become an interesting research subject in the recent years. Its special behavior has attracted the attention of the research community that motivated researchers to investigate it in details. As memristor is a relatively new electrical element, it is not yet available in the market as a solid state component Researchers found their way to build memristor emulators to achieve its pinched hysteresis. While many papers proposed floating emulators, only a few papers presented a grounded one. In this paper, an incremental grounded memristor emulator is proposed. The mathematical model of the emulator is discussed to match the theoretical model. Simulations are carried out to verify the circuit functionality. Parasitic effects have been studied for the proposed design. The emulator is very simple with only two current conveyors, one multiplier, and some passive elements. Experimental results showed a great match to the simulation results from SPICE.
增量接地电压控制忆阻器仿真器
近年来,忆阻器已成为一个有趣的研究课题。它的特殊行为引起了研究界的注意,促使研究人员对其进行了详细的研究。由于忆阻器是一种相对较新的电子元件,它还没有作为固态元件在市场上销售,研究人员找到了构建忆阻器仿真器的方法来实现其压缩迟滞。虽然许多论文提出了浮动模拟器,但只有少数论文提出了一个接地模拟器。本文提出了一种增量接地忆阻器仿真器。讨论了仿真器的数学模型,使其与理论模型相匹配。通过仿真验证了电路的功能。对所提出的设计进行了寄生效应研究。该仿真器结构简单,只有两个电流传送带、一个倍增器和一些无源元件。实验结果与SPICE仿真结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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