Thermoelectric Properties of Solvothermal Grown Bismuth Telluride Hexagonal Nanoplates

D. S. Choi, P. Taylor, K. J. Perry, G. Mallick, S. Karna
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Abstract

We have probed straightforwardly, thermoelectric (TE) properties of bismuth telluride (Bi2Te3) nanoplates grown via solvothermal method, without any modifications or optimization. The material was synthesized, its crystalline structure characterized, and prepared for TE measurements via sintering via Gleeble. Electron microscopy and diffraction data show highly crystalline hexagonal nanoplates with lateral growth direction. The thermoelectric properties of the sintered sample exhibit Seebeck coefficient of 21.118 uV/K which is in range of most optimized and engineered Bi2Te3 based TE devices. The results presented in this proceeding may prove invaluable in research and development of next-generation of low-dimension, low-costing thermoelectric devices and power generators.
溶剂热生长碲化铋六方纳米片的热电性能
我们直接探索了通过溶剂热法生长的碲化铋(Bi2Te3)纳米板的热电(TE)性能,而没有进行任何修改或优化。合成了该材料,对其晶体结构进行了表征,并通过Gleeble烧结制备了用于TE测量的材料。电子显微镜和衍射数据显示高度结晶的六方纳米片具有横向生长方向。烧结样品的热电性能表现出21.118 uV/K的塞贝克系数,这是最优化和设计的基于Bi2Te3的TE器件的范围。在这一过程中提出的结果可能在下一代低尺寸,低成本热电器件和发电机的研究和开发中证明是无价的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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