Novel Three-Input Gates for Silicon Quantum Dot

Abstract

Atomic Silicon Quantum Dot (SQD) is a prominent alternative to the current Complementary Metal Oxide Semiconductor (CMOS) transistor due to the low energy consumption and high integration potential. This emerging technology applies Silicon Dangling Bonds (DBs) that behave similarly to quantum-dots. Moreover, it does not require cryogenic temperatures, unlike other quantum-dot-based approaches. This paper proposes two novel 3-input gates, ORAND(x, y, z): = x ^ (y V z) and ANDOR(x, y, z): = x ^ y V z. Hence, we compare these 3-input designs with the equivalent circuits composed of 2-input gates. We use the state-of-the-art simulator, named SiQAD, to design and validate our experiments. Our main contribution is the novel 3-input gate designs that provide area and energy reductions. We achieve an average of 53% energy savings for all 3-input gates compared to the equivalent circuit built with 2-input gates.