Behavioral modeling and digital predistortion of Power Amplifiers with memory using Two Hidden Layers Artificial Neural Networks

F. Mkadem, M. B. Ayed, S. Boumaiza, J. Wood, P. Aaen
{"title":"Behavioral modeling and digital predistortion of Power Amplifiers with memory using Two Hidden Layers Artificial Neural Networks","authors":"F. Mkadem, M. B. Ayed, S. Boumaiza, J. Wood, P. Aaen","doi":"10.1109/MWSYM.2010.5517039","DOIUrl":null,"url":null,"abstract":"This paper presents a novel Two Hidden Layers Artificial Neural Networks (2HLANN) model for behavioral modeling and linearization of RF Power Amplifiers (PAs). Starting with a feedback loop principle model of a PA, an appropriate neural networks structure is deduced. This structure was then optimized to form a real valued and feed-forward 2HLANN based model capable of predicting the nonlinear behavior and the memory effects of wideband PAs. The validation of the proposed model in mimicking the behavior of a Device Under Test (DUT) is carried out in terms of its accuracy in predicting the output spectrum, dynamic AM/AM and AM/PM characteristics and the normalized mean square error. In addition, the 2HLANN model was used to linearize two 250 Watt peak-envelope-power Doherty PAs (DPAs) driven with 20 MHz bandwidth signals. The linearization of these DPAs using the 2HLANN enabled attaining an output power of up to 46.8 dBm and an average efficiency of up to 47.5% coupled with an Adjacent Channel Power Ratio higher than 50 dBc. When compared to a number of previously published behavioral and DPD schemes, the 2HLANN model demonstrated an excellent modeling accuracy and linearization capability.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5517039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32

Abstract

This paper presents a novel Two Hidden Layers Artificial Neural Networks (2HLANN) model for behavioral modeling and linearization of RF Power Amplifiers (PAs). Starting with a feedback loop principle model of a PA, an appropriate neural networks structure is deduced. This structure was then optimized to form a real valued and feed-forward 2HLANN based model capable of predicting the nonlinear behavior and the memory effects of wideband PAs. The validation of the proposed model in mimicking the behavior of a Device Under Test (DUT) is carried out in terms of its accuracy in predicting the output spectrum, dynamic AM/AM and AM/PM characteristics and the normalized mean square error. In addition, the 2HLANN model was used to linearize two 250 Watt peak-envelope-power Doherty PAs (DPAs) driven with 20 MHz bandwidth signals. The linearization of these DPAs using the 2HLANN enabled attaining an output power of up to 46.8 dBm and an average efficiency of up to 47.5% coupled with an Adjacent Channel Power Ratio higher than 50 dBc. When compared to a number of previously published behavioral and DPD schemes, the 2HLANN model demonstrated an excellent modeling accuracy and linearization capability.
基于两隐层人工神经网络的记忆功率放大器行为建模与数字预失真
提出了一种新的两隐层人工神经网络(2HLANN)模型,用于射频功率放大器(pa)的行为建模和线性化。从PA的反馈回路原理模型出发,推导出合适的神经网络结构。然后对该结构进行优化,形成一个基于实值前馈2HLANN的模型,该模型能够预测宽带PAs的非线性行为和记忆效应。根据预测输出频谱、动态AM/AM和AM/PM特性以及归一化均方误差的准确性,对所提出的模型在模拟被测设备(DUT)行为方面进行了验证。此外,2HLANN模型用于线性化两个由20 MHz带宽信号驱动的250瓦峰值包络功率Doherty PAs (dpa)。使用2hlan对这些dpa进行线性化,使其输出功率高达46.8 dBm,平均效率高达47.5%,相邻通道功率比高于50 dBc。与许多先前发表的行为和DPD方案相比,2HLANN模型显示出良好的建模精度和线性化能力。
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