Large domain validity of MOSFET microwave-rectification response

Abstract

This paper deals with the “in band” and “out band” rectification of a Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) device and proposes a semi-empirical model to predict the rectification effect in all transistor regions. The modeling method is based on two variables Taylor series expansion of ID(VGS, VDS) which shows a modification in drain current due to a gate Radio-Frequency (RF) voltage. This modification depends on the transconductance and conductance derivatives. When the transistor operates in the non-saturation and linear region the conductance becomes an important nonlinear source. However, it can be neglected in the saturation region of the MOSFET.