Advances of Gate Stack Technology in MOSFETs

Abstract

In this digital era, an increasing number of semiconductor manufacturing companies have developed thinner and cheaper circuit components, such as diodes, MOSFETs, and FinFETs. At the same time, gate stack technology is also introduced in MOSFETs to help solve the problem posed by short channel effects. There are a large number of researches on different MOSFETs using gate stack technology, therefore, this paper is a literature review of three different kinds of gate stacked MOSFETs and their behavior against short channel effects. The MOSFETs discussed in this paper are investigated in 2017, 2018 and 2020, and the ability of weakening short channel effects is also analyzed. Drain-induced barrier lowering (DIBL), threshold voltage roll-off, and subthreshold swing are three common short channel effects, and though the improvement in gate stack technology, they are suppressed in some degree. Gate stack technology has been developing new possibilities and it is expected that gate stack MOSFETs are much more powerful in confronting short channel effects and they will play a key role in different fields in the future.