Effect of oxygen pressure on the semiconductor properties of FTO thin films

Ali Hamieh, Jihad Hamieh, A. Hamie, A. Ghorayeb, A. Zaiour, B. Assaf
{"title":"Effect of oxygen pressure on the semiconductor properties of FTO thin films","authors":"Ali Hamieh, Jihad Hamieh, A. Hamie, A. Ghorayeb, A. Zaiour, B. Assaf","doi":"10.1109/ICM.2017.8268835","DOIUrl":null,"url":null,"abstract":"In this paper, the Optical and Semiconductor properties of epitaxial thin films of Fe<inf>2−x</inf>Ti<inf>x</inf>O<inf>3-δ</inf>, deposited on SrTiO<inf>3</inf> (001) by pulsed laser deposition (PLD) are studied. We use Perlin Elmer 9500 spechtrophotometer in order to measure the optical transmission and reflection. The prepared films using oxygen pressure PO2 above 3 ∗ 10<sup>−7</sup> Torr, presents a R(3) symmetry structure. The prepared samples present a deficiency δ = 0.35. The optical properties show a very important dependence with the oxygen cation stoichiometry. These last properties, which are dominated by the oxygen deficiency obtained during the growth of thin films, show a semiconductor behavior where the conductivity increase more with S than by the atomic ordering of titanium.","PeriodicalId":115975,"journal":{"name":"2017 29th International Conference on Microelectronics (ICM)","volume":"173 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2017.8268835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, the Optical and Semiconductor properties of epitaxial thin films of Fe2−xTixO3-δ, deposited on SrTiO3 (001) by pulsed laser deposition (PLD) are studied. We use Perlin Elmer 9500 spechtrophotometer in order to measure the optical transmission and reflection. The prepared films using oxygen pressure PO2 above 3 ∗ 10−7 Torr, presents a R(3) symmetry structure. The prepared samples present a deficiency δ = 0.35. The optical properties show a very important dependence with the oxygen cation stoichiometry. These last properties, which are dominated by the oxygen deficiency obtained during the growth of thin films, show a semiconductor behavior where the conductivity increase more with S than by the atomic ordering of titanium.
氧压对FTO薄膜半导体性能的影响
本文研究了脉冲激光沉积法(PLD)在SrTiO3(001)上沉积Fe2−xTixO3-δ外延薄膜的光学和半导体性能。我们使用Perlin Elmer 9500分光光度计来测量光的透射和反射。氧压PO2高于3 * 10−7 Torr时制备的薄膜呈现R(3)对称结构。制备的样品的亏缺值δ = 0.35。光学性质与氧阳离子的化学计量关系密切。这些最后的性质,主要是由薄膜生长过程中获得的氧缺乏决定的,表现出半导体行为,其中电导率随着S的增加而增加,而不是由钛的原子有序增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信