R. Staszewski, Dirk K I P O L D, C. Hung, P. Balsara
{"title":"TDC-based frequency synthesizer for wireless applications","authors":"R. Staszewski, Dirk K I P O L D, C. Hung, P. Balsara","doi":"10.1109/RFIC.2004.1320575","DOIUrl":null,"url":null,"abstract":"We analyze phase noise performance and further discuss details of an all-digital PLL that is used in a commercial 130 nm CMOS single-chip Bluetooth radio. The frequency synthesizer uses a digitally controlled oscillator with a digital loop filter and a time-to-digital converter that acts as a phase/frequency detector. When implemented in a deep-submicron CMOS, the presented architecture appears more advantageous over conventional charge-pump-based PLL, since it contains only two intrinsic phase noise sources and it does not rely on the fine voltage resolution of analog circuits. The measured close-in phase noise of -86.2 dBc/Hz and the rms phase error of 0.9/spl deg/ are adequate also for GSM applications.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"78","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 78
Abstract
We analyze phase noise performance and further discuss details of an all-digital PLL that is used in a commercial 130 nm CMOS single-chip Bluetooth radio. The frequency synthesizer uses a digitally controlled oscillator with a digital loop filter and a time-to-digital converter that acts as a phase/frequency detector. When implemented in a deep-submicron CMOS, the presented architecture appears more advantageous over conventional charge-pump-based PLL, since it contains only two intrinsic phase noise sources and it does not rely on the fine voltage resolution of analog circuits. The measured close-in phase noise of -86.2 dBc/Hz and the rms phase error of 0.9/spl deg/ are adequate also for GSM applications.