Selective Metallization for a W-band Meander Line TWT

Abstract

The development of terahertz (THz) millimetre-wave (MMW) regime vacuum electronics necessitates the concurrent development of adequate fabrication techniques. Since the size of vacuum electronic devices is proportional to their frequency of operation, fabricating them for the THz and mmw regimes requires fabrication techniques capable of producing millimeter and micron-scale features. Monolithic microfabrication technologies such as deep reactive ion etching (DRIE) have been used widely in the MEMS community for years to achieve these sorts of feature sizes.