Effect of Encapsulation on the Resistive Switching Characteristics of Gama-minopropyltriethoxysilane Layer

Abstract

Passivation or encapsulation is generally required for organic layers because they are easily attacked by ambient oxygen or water vapor, causing property deterioration. It has been reported that gammaaminopropyltriethoxysilane ($\gamma$-APTES), an amino-functional organosilane material, can exhibit resistive switching behavior. In this work, we investigated the effect of encapsulation on the resistive switching characteristics of the $\gamma$-APTES layer. We found that the switching voltages as well as the resistances of high-resistance state (RHRS) and resistance of low-resistances state (RLRS) of encapsulated $\gamma$-APTES layers were different from those of non-encapsulated ones. The causes for these differences in the resistive switching characteristics between the encapsulated and non-encapsulated $\gamma$-APTES layer are discussed.