A Complete Specification of the Gain Control Characteristics of RF And IF Transistors

Abstract

This paper describes a unique method for specifying the gain control characteristics of high frequency transistors over their entire AGC range. The forward gain control characteristics of transistors can be measured by means of a curve tracer to permit the specification, within published limits, of the high frequency power gain versus collector to emitter voltage curve. While this report describes the specification of forward gain control characteristics the system can also be used for reverse gain control specifications.