A differential variable gain SiGe BiCMOS LNA design using current splitting and feedback techniques

Chiung-Feng Tai, Chih-Yu Tsai, H. Chiou
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引用次数: 1

Abstract

A differential variable gain low noise amplifier (DVGLNA) using the 0.35 /spl mu/m 3P3M SiGe BiCMOS process is described in this work. The differential LNA with gain control and high linearity has been developed for WCDMA applications. Using this gain control topology, differential variable gain LNA remains its input and output return loss in both high gain and low gain mode. The circuit measurement is performed by using a FR-4 PCB test fixture. The differential LNA achieves gain of 16.5 dB, noise figure of 2.1 dB, the third-order intercept point of -2 dBm, and the gain control range of 11 dB.
采用电流分裂和反馈技术的差分变增益SiGe BiCMOS LNA设计
本文介绍了一种采用0.35 /spl mu/m 3P3M SiGe BiCMOS工艺的差分变增益低噪声放大器(DVGLNA)。为WCDMA应用开发了具有增益控制和高线性度的差分LNA。使用这种增益控制拓扑,差分变增益LNA在高增益和低增益模式下都保持其输入和输出返回损耗。电路测量是通过使用FR-4 PCB测试夹具来完成的。差分LNA的增益为16.5 dB,噪声系数为2.1 dB,三阶截距为-2 dBm,增益控制范围为11 dB。
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