New Laser Structure for Polarization Insensitive Semiconductor Amplifier with Low Current Consumption

Abstract

Due to their low current consumption and their intrinsic simplicity polarization insensitive semiconductor travelling wave amplifiers (TWAs) are very attractive components for long haul non regenerated fiber transmissions systems. It appears up to now that only buried stripe with width less than one micron has enabled to obtain high gain and polarization insensitivity for low bias current [1 - 4], However realization of such narrow stripe leads to poor reproducibility in case of conventional laser structure. We have investigated a new structure, called modified double channel planar buried heterostructure (MDCPBH), which allows to process very narrow stripe with much better reproducibility than previously obtained.