Nanotubes are High Mobility Semiconductors

Abstract

The electron transport properties of a very long (20 micron) CVD‐grown nanotube are reported. In this device the transport is dominated by intrinsic scattering processes at room temperature. The room temperature hole mobility is 20,000 cm2/Vs, exceeding that of technologically‐relevant semiconductors. The mobility increases with decreasing temperature, and is estimated to be greater than 180,000 cm2/Vs at 470 mK.