Nanopillar Formation via Defect Activation and Coulomb Explosion Initiated by a 355 nm Nd:YAG Laser Beam

Abstract

The interaction of nanosecond laser pulses in the ultraviolet wavelength range with the semiconductor SiC was investigated. Under low energy fluence, an array of highly orientated nanoparticles on the surface of SiC was formed via defect activation and coulomb explosion using 355 nm UV laser irradiation. Under high energy fluence, surface modification and ablation could occur.