New technological and constructive methods of raising of power irradiation and information transmission speed in the optical transmitter on the base of GaAlAs lasers for IOCL

Abstract

This report presents results on the study and development of the first native Russian high frequency semiconductor lasers for intersatellite optical communication links (IOCL). Due to the application of the latest technology in the design of the lasers and the new method of MOCVD epitaxy developed to fabricate them, the results have important practical value. GaAlAs single mode lasers with output wavelengths in the range of 0.81-0.86 /spl mu/m, increased continuous mode radiating power up to 60-70 mW and life times in the range of 5-10 thousand hours have been created. For the first time on lasers of this type high modulation frequencies (up to 250 MHz) that allow an increased transmission information rate on each channel and meet the international standard 155 Mbit/sec (Recommendations G.703) were attained. At 100-200 MHz, the power in the pulse reached values of more than 100 mW.