Plasmonic photodetector with THz electrical bandwidth

2017 Photonics North (PN) Pub Date : 2017-06-01 DOI:10.1109/PN.2017.8090568

Saba Siadat Mousavi, P. Berini, A. Stöhr

引用次数: 1

Abstract

A plasmonic photodetector based on nanomonopoles is proposed and investigated. The detection region is a thin film of InGaAs, placed on a n-doped InP substrate. The responsivity of the photodetector is estimated to be ∼200 mA/W, while its 3 dB electrical bandwidth is ∼ 1 THz.

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太赫兹电带宽等离子体光电探测器

提出并研究了一种基于纳米单极子的等离子体光探测器。检测区域是InGaAs薄膜，放置在n掺杂的InP衬底上。光电探测器的响应度估计为~ 200ma /W，而其3db电带宽为~ 1thz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 Photonics North (PN)

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