A 42mW 26–28 GHz phased-array receive channel with 12 dB gain, 4 dB NF and 0 dBm IIP3 in 45nm CMOS SOI

Umut Kodak, Gabriel M. Rebeiz
{"title":"A 42mW 26–28 GHz phased-array receive channel with 12 dB gain, 4 dB NF and 0 dBm IIP3 in 45nm CMOS SOI","authors":"Umut Kodak, Gabriel M. Rebeiz","doi":"10.1109/RFIC.2016.7508324","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power 26-28 GHz phased-array receive channel in 45nm CMOS SOI. The design alternates cascode amplifiers with switched-LC phase-shifter cells to result in 5-bit phase control with gain and rms phase error <; 0.6 dB and 4°, respectively, over 32 phase states. The measured gain, noise figure (NF) and IIP3 are 12.2 dB, 4 dB and 0 dBm, respectively, and are achieved at a DC power of 42 mW. A gain control of 6-dB is also available without affecting the system NF. To our knowledge, this represents state-of-the-art in mm-wave phased-arrays with the best published linearity at low NF. Application areas include 5G base-stations and hand-held units.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30

Abstract

This paper presents a low-power 26-28 GHz phased-array receive channel in 45nm CMOS SOI. The design alternates cascode amplifiers with switched-LC phase-shifter cells to result in 5-bit phase control with gain and rms phase error <; 0.6 dB and 4°, respectively, over 32 phase states. The measured gain, noise figure (NF) and IIP3 are 12.2 dB, 4 dB and 0 dBm, respectively, and are achieved at a DC power of 42 mW. A gain control of 6-dB is also available without affecting the system NF. To our knowledge, this represents state-of-the-art in mm-wave phased-arrays with the best published linearity at low NF. Application areas include 5G base-stations and hand-held units.
42mW 26 - 28ghz相控阵接收通道,12 dB增益,4 dB NF和0 dBm IIP3, 45nm CMOS SOI
提出了一种基于45nm CMOS SOI的低功耗26- 28ghz相控阵接收通道。该设计将级联放大器与开关lc移相单元交替使用,从而实现5位相位控制,增益和均数相位误差<;在32个相态下,分别为0.6 dB和4°。测量的增益、噪声系数(NF)和IIP3分别为12.2 dB、4 dB和0 dBm,直流功率为42 mW。在不影响系统NF的情况下,还可以使用6 db的增益控制。据我们所知,这代表了最先进的毫米波相控阵,在低NF下具有最佳的线性度。应用领域包括5G基站和手持设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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