Minimization of residual stress in TSV interconnections by controlling their crystallinity

Jiatong Liu, Takeru Kato, Ken Suzuki, H. Miura
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Abstract

The crystallinity of electroplated copper thin-film interconnections varies drastically depending on its manufacturing process, and thus, their mechanical and electrical properties change significantly depending on their micro texture. These changes should cause the variation of the residual stress in the interconnections, and thus, electronic performance of devices and the lifetime of interconnections should vary depending on the amplitude of the residual stress around TSV structures. The main reasons for high residual stress is attributed to not only thermal stress but also the shrinkage of the interconnections during their thermal history. Since the crystallinity of the interconnections varies drastically depending on their electroplating process, the residual stress after high temperature annealing is a strong function of the crystallinity. In this paper, the dominant process factors for changing the crystallinity and the residual stress in the electroplated interconnections were investigated by varying the electroplating process parameters systematically. Finally, it was found that the control of the crystallinity of a seed layer material used for the electroplating is the most important factor for controlling the crystallinity and long-term reliability of thin electroplated interconnections.
通过控制其结晶度来减小TSV互连中的残余应力
电镀铜薄膜互连的结晶度因其制造工艺的不同而有很大的差异,因此,其机械和电气性能也会因其微观结构而发生显著变化。这些变化应引起互连中残余应力的变化,因此,器件的电子性能和互连的寿命应取决于TSV结构周围残余应力的幅值。产生高残余应力的主要原因除了热应力外,还有连接件在热过程中的收缩。由于互连的结晶度随其电镀工艺的不同而变化很大,因此高温退火后的残余应力是结晶度的重要函数。本文通过改变电镀工艺参数,系统地研究了影响镀层结晶度和残余应力变化的主要工艺因素。最后,研究发现,控制用于电镀的种子层材料的结晶度是控制薄电镀互连结晶度和长期可靠性的最重要因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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