Enhancing dual-Vt design with consideration of on-chip temperature variation

J. Gu, G. Qu, Lin Yuan
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引用次数: 3

Abstract

dual-Vt technology is effective in leakage reduction and has been implemented in industry EDA tools. However, on-chip temperature is regarded as uniformly distributed over the chip, with a pre-assumed value. This assumption does not hold for designs in the deep sub-micron domain as on-chip temperature variation becomes more and more significant. As a result, treating temperature as a constant will either lead to non-optimal design in terms of leakage or unreliable circuit due to potential hot spots that have temperature higher than expected. In this paper, we propose a temperature-aware approach that leverages the on-chip temperature variation and takes into account the coupling effects between leakage and temperature to enhance the leakage reduction of any dual-Vt assignment algorithm. We synthesize and implement Opencore benchmarks using Synopsys tools and TSMC's 65nm low power dual-Vt library. The results show that we are able to improve the performance of a state-of-the-art dual Vt algorithm by an average of 11.2% in leakage saving, a more than 1.4°C drop of peak temperature, and a significant reduction of cells in hot regions without timing failure.
考虑片内温度变化的改进双电压设计
双vt技术在减少泄漏方面是有效的,并已在工业EDA工具中得到应用。然而,片上温度被认为是均匀分布在芯片上的,具有预先假设的值。由于片上温度变化越来越明显,这种假设在深亚微米领域的设计中就不成立了。因此,将温度视为常数将导致泄漏方面的非最佳设计或由于潜在热点的温度高于预期而导致电路不可靠。在本文中,我们提出了一种温度感知方法,该方法利用芯片上的温度变化,并考虑泄漏和温度之间的耦合效应,以增强任何双vt分配算法的泄漏减少。我们使用Synopsys工具和台积电的65nm低功耗双vt库合成和实现Opencore基准测试。结果表明,我们能够将最先进的双Vt算法的性能提高11.2%,平均节省泄漏,峰值温度下降超过1.4°C,并且在没有时序故障的情况下显著减少热区域的电池。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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