Evaluation and Characterization of 15-kV, 4H-SiC N-Channel MOSFET for Power Conversion Applications

Abstract

This work presents the evaluation and characterization of 15-kV, 5-mm x 5-mm silicon carbide (SiC) metaloxide-semiconductor field effect transistors (MOSFETs). The continuous current rate for these devices is 1 amperes. These devices are ideal for high voltage, fast switching, and high-power density electronic applications due to its superior material properties. The static and dynamic performance of the 15-kV SIC MOSFETs will be investigated and reported in the paper. The goal of the evaluation is to assess the fast dV/dt capabilities of these power MOSFETs. These high voltage MOSFETs exhibited leakage currents less than 10 µA at 15-kV and successful passed a long-term DC blocking evaluation exceeding 8-hrs.