A Comparative Performance Analysis of CMOS and FinFET Based Voltage Mode Sense Amplifier

Abstract

FinFETs are the devices which replaced bulk MOSFETS because of its surpassing quality of minimizing leakage power and reducing short channel effects occurring in MOSFETS due to decrease in channel length. In this paper a comparative analysis of proposed Voltage Mode Sense Amplifier (VMSA) is performed using FinFET and CMOS at different technology node. Simulation is carried out using H-spice tool and it is observed that power consumption in FinFET based voltage mode sense amplifier is reduced to 85.81% at 22nm and 89.06% at 16nm technology. Power Delay Product (PDP) is reduced to 90.15% at 22nm and 90.99% at 16nm technology.