Film properties and integration performance of a nano-porous carbon doped oxide

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-09 DOI:10.1109/IITC.2004.1345720

Girish Dixit, Lester A. D'Cruz, Sang-Wook Ahn, Yi Zheng, Josephine J. Chang, M. Naik, Alexandros T. Demos, D. Witty, Hichem M'Saad

引用次数: 2

Abstract

A porous carbon doped oxide has been developed using a conventional PECVD reactor. Sequential electron beam treatment using a flood beam provides a means for removal of the thermally labile organic species and results in a porous material with high thermal stability. Film properties and integration results presented show the viability of integrating this film into a conventional dual damascene interconnect flow.

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纳米多孔碳掺杂氧化物的薄膜性能及集成性能

采用传统的PECVD反应器制备了多孔碳掺杂氧化物。使用流束的顺序电子束处理提供了一种去除热不稳定有机物质的方法，并产生具有高热稳定性的多孔材料。薄膜性能和集成结果表明，将该薄膜集成到传统的双大马士革互连流中是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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