The bipolar theory of the Bipolar Field-Effect Transistor: Recent advances

Abstract

This article summarizes the history and progresses on our development of the Bipolar Field-Effect Transistor Theory (BiFET). The 2-Dimensional (2-D) rectangular geometry of the transistor (uniform in the width or Z-direction) is employed to decompose the 2-D equation into two 1-D equations which are parametrically coupled by the surface-electric-potential. This decomposition enables us to obtain the generic baseline solutions, both analytical and numerical, without the 2-D features which are then treated as the modifications of the 1-D solutions. The 1952-Shockley 2-section model used for the volume-channel geometry of his Junction-Gate (JG) FET is employed to both the surface and the volume-channels of the MOS BiFET, which we have designated and coined as the emitter and collector sections, each can simultaneously be electron and hole, surface or volume channels.