Hoai-Nam Nguyen, Jang-Hong Choi, Byung-Hun Min, Mi-Jeong Park, M. Park, Seok-Kyun Han, Sang-Gug Lee, C. Kim
{"title":"A low-power small-size transmitter with discrete-time baseband filter for LTE in 65 nm CMOS","authors":"Hoai-Nam Nguyen, Jang-Hong Choi, Byung-Hun Min, Mi-Jeong Park, M. Park, Seok-Kyun Han, Sang-Gug Lee, C. Kim","doi":"10.1109/ASSCC.2013.6691019","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a low-power small-size transmitter with discrete-time baseband filter for LTE application operating at 1.8-2 GHz. The transmitter achieves 4.5 dBm output power with more than -46 dBc of LO feedthrough suppression and -38 dBc image rejection ratio. At -0.3 dBm transmitted power of LTE 5 MHz channel, ACLR is measured below -42 dBc for both upper and lower channels with 1.83 and 2.47 % EVM for QPSK and 16-QAM modulation signals, respectively. The prototype chip is fabricated in a 65 nm CMOS technology and dissipates 59 mA current from 1.2 V supply and 13 mA from 2.5 V supply.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents the design of a low-power small-size transmitter with discrete-time baseband filter for LTE application operating at 1.8-2 GHz. The transmitter achieves 4.5 dBm output power with more than -46 dBc of LO feedthrough suppression and -38 dBc image rejection ratio. At -0.3 dBm transmitted power of LTE 5 MHz channel, ACLR is measured below -42 dBc for both upper and lower channels with 1.83 and 2.47 % EVM for QPSK and 16-QAM modulation signals, respectively. The prototype chip is fabricated in a 65 nm CMOS technology and dissipates 59 mA current from 1.2 V supply and 13 mA from 2.5 V supply.