Oscillator and amplifier grids

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188112

D. Rutledge, J. Hacker, M. Kim, R. Weikle, R.P. Smith, E. Sovero

引用次数: 12

Abstract

Presents the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.<>

查看原文本刊更多论文

振荡器和放大器栅格

介绍了一种准光功率组合阵列和一种新型平面异质结双极晶体管(HBT)栅格放大器的最大输出功率设计。制作了一个16元MESFET栅格振荡器，在9.21 GHz时产生28w的有效辐射功率。总辐射功率估计为2.0 W，直流到射频效率为28%。提出了一种适用于单片制造的新型平面栅格放大器。平面放大器栅格是一种混合设计，使用HBT晶体管以差分对结构单片制造，导线结合到Duroid衬底上。栅格放大器在9.9 GHz时的测量增益为11 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1992 IEEE Microwave Symposium Digest MTT-S

自引率

0.00%

发文量