Evidence of lateral coupling phenomenon in self-assembled InAs/InP(001) quantum dots characterized by photoluminescence spectroscopy (PLS)

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI:10.1109/NAWDMPV.2014.6997602

F. Besahraoui, M. Bouslama, M. Ghafour, Z. Lounis, K. Hamaida

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Abstract

We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic properties of self-assembled InAs quantum islands (QIs) grown on InP(001) substrate. InAs/InP(001) QIs are grown by Molecular Beam Epitaxy (MBE) method in optimized conditions of temperature and gas pressure. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum islands have an isotropic quantum dots (QDs) shape. Through the excitation density PL measurements, we have checked the origin of the PL peaks. The observed PL peaks are related to a ground states of two families of InAs/InP(001) quantum dots. Through the study of the excitation density - PL spectra, we have evidenced the presence of a lateral coupling phenomenon between the two families of InAs/InP(001) quantum dots. In this case, the ground states are infected by this phenomenon which is considered, in this situation, a degradation source of the optoelectronic devices.

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光致发光光谱(PLS)表征自组装InAs/InP(001)量子点中横向耦合现象的证据

利用光致发光光谱(PLS)表征了生长在InP(001)衬底上的自组装InAs量子岛(QIs)的光电特性。采用分子束外延(MBE)法在优化的温度和气压条件下生长InAs/InP(001) QIs。从偏振光致发光(PPL)测量中，我们推断出InAs量子岛具有各向同性量子点(QDs)形状。通过对激发密度PL的测量，我们检查了PL峰的来源。观测到的PL峰与两族InAs/InP(001)量子点的基态有关。通过对激发密度- PL光谱的研究，我们证明了InAs/InP(001)量子点两族之间存在横向耦合现象。在这种情况下，基态受到这种现象的感染，在这种情况下，这种现象被认为是光电器件的退化源。

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2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)

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