A Very Low SEF Neural Amplifier by Utilizing a High Swing Current-Reuse Amplifier

Kebria Naderi, Erwin H. T. Shad, M. Molinas, A. Heidari, T. Ytterdal
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引用次数: 5

Abstract

Although current-reuse amplifier has been widely used in biomedical applications because of their low input-referred thermal noise, they don’t have high output swing and their gain is limited. In this article, a rail-to-rail current-reuse amplifier with a 92 dB open-loop gain is introduced while its power and noise increment is just 7%. The proposed structure is a two stage amplifier which doesn’t need further compensation since all nodes are diode connected except for the output node. In order to show the merit of the proposed structure, the NEF, PEF and SEF of the proposed amplifier in a capacitively-coupled neural amplifier structure is compared to the state-of-the-art neural amplifiers. The amplifier is designed and simulated in a commercially available 0.18 µm CMOS technology. The midband gain of the neural amplifier is 40 dB in the bandwidth between 0.6 Hz and 5 kHz. The proposed structure consumes 1.07 µA current from a 1.2 V supply voltage. The NEF, PEF and SEF of proposed structure are 1.68, 3.4, 0.05, respectively. The total area consumption of the neural amplifier is 0.03 mm2 without pads.
利用高摆幅电流复用放大器的极低SEF神经放大器
电流复用放大器由于其低输入参考热噪声而被广泛应用于生物医学领域,但其输出摆幅不高且增益有限。本文介绍了一种开环增益为92 dB的轨对轨电流复用放大器,其功率和噪声增量仅为7%。所提出的结构是一个两级放大器,不需要进一步的补偿,因为所有节点都是二极管连接,除了输出节点。为了显示所提出的结构的优点,在电容耦合神经放大器结构中,所提出的放大器的NEF, PEF和SEF与最先进的神经放大器进行了比较。该放大器采用市售的0.18µm CMOS技术进行设计和仿真。神经放大器的中频增益在0.6 Hz和5 kHz之间的带宽为40 dB。该结构在1.2 V电源电压下消耗1.07µA电流。该结构的NEF、PEF和SEF分别为1.68、3.4和0.05。神经放大器的总面积消耗为0.03 mm2,不含衬垫。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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