VSWR-protected silicon bipolar power amplifier with smooth power control slope

Abstract

A 1.8 GHz silicon bipolar PA is presented. A protection circuit enables the amplifier to sustain a 10:1 load VSWR at 5 V supply despite a low BV/sub ceo/ of 6.5 V. A temperature-compensated bias network allows a moderate power-control slope of less than 80 dB/V. A 50% PAE is attained at a 33.8 dBm output power level. The 1.2/spl times/1.5 mm/sup 2/ die is implemented in 0.8 /spl mu/m BiPMOS.