A quad-core-coupled triple-push 295-to-301 GHz source with 1.25 mW peak output power in 65nm CMOS using slow-wave effect

A. H. M. Shirazi, Amir Nikpaik, S. Mirabbasi, S. Shekhar
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引用次数: 19

Abstract

Achieving high output power in (sub-)THz voltage-controlled oscillators (VCOs) has been a severe design challenge in CMOS technology. In this work, an architecture for coupled terahertz (THz) VCOs is presented. The architecture utilizes four coupled triple-push VCOs and combines the generated third harmonic currents using slow-wave coplanar waveguide (S-CPW) at 300 GHz. Coupling four cores increases output power, and use of S-CPW reduces the loss and increases the quality factor of the VCO tank. It is shown that using S-CPW results in ~2.6 dB of lower loss as compared to the conventional CPW or grounded-CPW (GCPW) structures. The VCO is tuned using parasitic tuning technique and achieves 1.7% frequency tuning range (FTR). The proposed structure is designed and fabricated in a 65-nm bulk CMOS process. The measured peak output power of the 295-to-301 GHz VCO is 0.9 dBm (≈1.25 mW) at 300 GHz while consuming 235 mW (with a DC to RF efficiency of 0.52%).
采用慢波效应的四核耦合三推295- 301 GHz源,峰值输出功率为1.25 mW
在(次)太赫兹压控振荡器(vco)中实现高输出功率一直是CMOS技术的一个严峻设计挑战。在这项工作中,提出了一种耦合太赫兹(THz) vco的结构。该架构利用四个耦合三推式vco,并使用300 GHz的慢波共面波导(S-CPW)将产生的三次谐波电流组合在一起。四芯耦合增加了输出功率,使用S-CPW减少了损耗,提高了VCO油箱的质量系数。结果表明,与传统的CPW或接地CPW (GCPW)结构相比,S-CPW的损耗降低了约2.6 dB。VCO采用寄生调谐技术进行调谐,达到1.7%的频率调谐范围(FTR)。所提出的结构是在65纳米CMOS工艺中设计和制造的。在300 GHz时,测量到295 ~ 301 GHz VCO的峰值输出功率为0.9 dBm(≈1.25 mW),功耗为235 mW(直流到射频效率为0.52%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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